21-04-2021

Drivers Si Elektronik



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Drivers Si Elektronik

Discovery Z3 Wireless Speaker

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  • Buy Si-En Technology SN3218AI424E in Avnet APAC. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other LED Drivers products.
The ELAC Discovery™ Z3 Wireless Speaker lets you stream your favorite music with Spotify Connect, Roon Ready, Discovery Connect and Bluetooth. Discovery Z3 is engineered to fill your room with sound, all with a small footprint and elegant design that let it nearly disappear. ELAC’s custom-designed drivers deliver crystal-clear highs and deep bass with so much impact you’ll think there’s a subwoofer hidden in the room! With just one system, you can stream all your favorite music effortlessly, using your smartphone or tablet… to any room in your home.
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The New Debut Reference

Drivers
Building on the iconic status of ELAC’s Debut Series, a new Reference line emerges for our exclusive dealers. The Debut Reference brings significant acoustical and visual advancements. Designed to blend with traditional or contemporary styles. Debut Reference sounds as great as it looks!

RD001

Elektronik

Silicon Carbide (SiC) technology is enjoying growing popularity in medium and high voltage power switching applications (typically above 300 V). The extremely fast switching speed of SiC-MOSFETs, their low ON-resistance and excellent thermal performance (conductivity and stability) are some of the key advantages against its Silicon-based counterparts. SiC devices are thus starting to replace IGBT (Insulated Gate Bipolar Transistor) in many applications in industries as diverse as E-mobility, industrial and renewable energy.

Drivers Si Elektronik Dan

The voltage required across the gate-source terminals of a SiC-MOSFET is typically 14 to 20 V for full turn-on and -2 to -5 V for robust turn-off. Note that this negative voltage is required for a faster turn-off transition as well as to keep the device off reliably, preventing spurious Miller-effect turn-on in hard-switched half-bridge applications, due to the very high dv/dt generated across the device terminals during the fast switching transitions. In addition, minimizing the total parasitic capacitance across the isolation barrier is critical for SiC Gate Driver systems in order to achieve higher Common Mode Transient Immunity (CMTI) and better EMI performance. This reference design presents an extremely compact auxiliary power supply, providing two isolated output rails of +15 V and -4 V with a combined total output power of 6 W. With the extremely low interwinding capacitance of the WE-AGDT Transformer down to 6.8 pF, the design is especially optimized for driving Silicon Carbide (SiC) MOSFETs in state-of-the-art applications, and also suitable for IGBT devices.

Drivers Si Elektronik Online

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